Lub nti yog qhov tseem ceeb tshaj ntawm LED. Tam sim no, muaj ntau cov LED nti manufacturers nyob rau hauv tsev thiab sia mus thoob ntiajteb, tab sis tsis muaj ib hom qauv rau kev sib faib ua pawg. Yog tias faib los ntawm lub hwj chim, muaj lub zog loj thiab nruab nrab thiab lub zog me; yog tias muab cais los ntawm cov xim, nws yog xim liab, ntsuab thiab xiav; Tau faib ua cov duab, feem ntau muab faib ua cov square, wafers; yog hais tias faib los ntawm voltage, nws muab faib ua hluav taws xob tsawg DC DC chips thiab high-voltage DC chips. Hais txog kev sib piv ntawm cov thev naus laus zis hauv tsev thiab txawv teb chaws, kev siv tshuab chip txawv teb chaws yog qhov tshiab, thiab kev tsim chip hauv tsev tsis hnyav.
Substrate cov khoom siv thiab wafer kev loj hlob tshuab yog qhov tseem ceeb
Tam sim no, tus yuam sij rau kev loj hlob ntawm LED nti thev naus laus zis lus dag hauv cov khoom siv substrate thiab kev lag luam wafer kev loj hlob. Ntxiv rau cov tso ua kua zeb, silicon (Si), silicon carbide (SiC) cov khoom hauv qab, zinc oxide (ZnO) thiab gallium nitride (GaN) kuj tseem yog qhov tseem ceeb ntawm kev tshawb nrhiav LED nti niaj hnub no. Nyob rau tam sim no, feem ntau ntawm kev lag luam muaj sapphire lossis silicon carbide substrates yog siv los epitaxially hlob dav-bandgap semiconductor gallium nitride. Ob cov ntaub ntawv yog kim heev thiab monopolized los ntawm cov tuam txhab loj txawv teb chaws, thiab tus nqi ntawm silicon substrates yog siab dua li ntawm sapphire thiab carbonization. Silicon substrates muaj ntau pheej yig dua, ua rau cov substrates loj dua thiab nce kev siv MOCVD, yog li nce cov txiaj ntsig tuag. Yog li, txhawm rau txhawm rau hla thoob ntiaj teb cov kev cai patent, Suav cov tsev tshawb fawb thiab cov tuam txhab LED pib tshawb fawb ntawm cov khoom siv silicon.
Txawm li cas los xij, qhov teeb meem yog tias qhov kev sib txuam ua ke zoo ntawm silicon thiab gallium nitride yog ib qho kev nyuaj ntawm LED nti. Cov teeb meem thev naus laus zis ntawm lub teeb hluav taws xob tsis txaus thiab qhov tawg los ntawm qhov kev tsis sib haum loj ntawm lub ntxaij ntoo tas mus li thiab qhov thermal expansion coefficient ntawm ob tau ntev los cuam tshuam rau chip teb. kev txhim kho ntawm.
Tsis ntseeg, los ntawm qhov pom ntawm lub substrate, lub ntsiab ntawm lub txaij dej tseem yog sapphire thiab silicon carbide, tab sis silicon tau dhau los ua kev txhim kho yav tom ntej ntawm cov nti teb. Rau Suav teb, qhov twg kev ua tsov rog ntawm kev sib ntaus sib tua yog qhov hnyav, lub silicon substrate muaj ntau tus nqi thiab tus nqi zoo: lub silicon substrate yog cov txheej txheem xaim hluav taws xob, uas tsis tsuas yog txo thaj chaw tuag, tab sis kuj tshem tawm cov kauj ruam qhuav ntawm gallium nitride epitaxial txheej Cov. Tsis tas li ntawd, silicon muaj qhov qis qis dua sapphire thiab silicon carbide, thiab nws tseem tuaj yeem txuag qee cov nqi hauv kev ua.
Tam sim no, kev lag luam LED feem ntau yog ua raws li 2 lossis 4 ntiv tes khaws ntaub maj. Yog tias kev ua lag luam GaN-based GaN tuaj yeem siv, tsawg kawg 75% ntawm cov khoom siv raw khoom yuav txuag tau. Raws li kev kwv yees los ntawm Nyiv Sanken Electric Co., tus nqi tsim khoom loj-loj xiav-GaN gallium LEDs siv silicon substrates yog 90% qis dua qhov ntawm sapphire substrates thiab silicon carbide substrates.
Cov tshuab hluav taws xob sib txawv hauv tsev thiab txawv teb chaws
Hauv cov teb chaws txawv teb chaws, Osram, Puri, Nyij Pooj thiab lwm lub tuam txhab ua lag luam tau ua cov kev tshawb fawb txog kev tshawb nrhiav qhov loj qhov loj me me raws li GaN-based LEDs. Philips, Sab Qab Teb Kauslim Samsung, LG, Nyiv lub Toshiba thiab lwm qhov loj thoob ntiaj teb LED loj kuj tau teeb tsa Kev Tshawb Fawb ntawm GaN-based LEDs ntawm cov roj silicon. Ntawm lawv, xyoo 2011, Puri tau tsim cov kev ua haujlwm zoo ntawm GaN-based LED ntawm 8-nti silicon substrate, ua tiav lub teeb pom kev zoo piv rau qhov zoo ntawm cov khoom siv sab saum toj ntawm LED ntawm sapphire thiab silicon carbide substrates ntawm 160 lm / W. Xyoo 2012, OSRAM tau ua tiav 6-nti silicon-on-silicon gallium-raws LED.
Hauv kev sib piv, hauv Suav teb loj, cov taw tes tawg ntawm LED nti enterprise technology yog feem ntau txhawm rau txhim kho cov peev txheej ntau lawm thiab loj-loj sapphire siv lead ua kev loj hlob tshuab, ntxiv rau qhov ua tiav ntawm cov hluav taws xob muaj zog LED chips ntawm 2-nti silicon substrate GaN -based LED chips hauv 2011. Cov tuam txhab suav suav tau ua rau tsis muaj kev cuam tshuam loj hauv kev tshawb fawb ntawm GaN-based LEDs ntawm silicon substrates. Tam sim no, LED nti tuam txhab hauv Suav teb tseem tsom rau qhov muaj peev xwm ntau lawm, sapphire substrate cov ntaub ntawv thiab kev lag luam wafer loj hlob. Sanan Optoelectronics, Dehao Runda, Tongfang Feem ntau ntawm cov suav teb cov chaw tsaws tsej muaj peev xwm tseem ua rau muaj peev xwm ua tau ntau lawm.